| 标题 |
On the nature of deep-level defects in β-Ga2O3 epilayers: The impact of isochronal rapid thermal annealing |
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| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Christopher A. Dawe; Douglas M. Murray Lendering; Vladimir P. Markevich; Janet Jacobs; Ian D. Hawkins; et al 出版日期:2026 |
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(2025-6-4)