| 标题 |
Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs |
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| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Mehak Ashraf Mir; Vipin Joshi; Rajarshi Roy Chaudhuri; Mohammad Ateeb Munshi; Rasik Rashid Malik; et al 出版日期:2024-07-22 |
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(2025-6-4)