| 标题 |
Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy |
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| DOI | |
| 其它 |
期刊:physica status solidi (a) 作者:Po-Chun Hsu; Eddy Simoen; Hu Liang; Brice De Jaeger; Benoit Bakeroot; et al 出版日期:2021-07-29 |
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(2025-6-4)