Lv4
718 积分 2024-12-15 加入
Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics
1天前
已完结
Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results
1天前
已完结
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs
1天前
已完结
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
1天前
已完结
Deep level transient spectroscopy: Tracing interface and bulk trap‐induced degradation in AlGaN/GaN‐heterostructure based devices
1天前
已完结
Impedance-dependent degradation in GaN HEMTs under high-voltage RF stress: Electro-thermal and trap mechanisms
1天前
已完结
A review of dynamic effects, reliability and mitigation techniques of AlGaN/GaN HEMTs
1天前
已完结
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
1天前
已完结
Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures
1天前
已关闭
Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
1天前
已完结
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