| 标题 |
Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronics Reliability 作者:J. Oliveira; P. Frey; Hervé Morel; Jean-Michel Reynès; J. Burky; et al 出版日期:2023-08-05 |
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(2025-6-4)