| 标题 |
2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Zhizhong Wang; Fuping Huang; Chunshuang Chu; Kangkai Tian; Hehe Gong; et al 出版日期:2024-04-19 |
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(2025-6-4)