| 标题 |
[高分]
Etch Characteristics of SiO2 Using Pulsed Triple-Frequency for Ar/C4F6/O2 Capacitive Coupled Plasmas |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Nanoscience and Nanotechnology 作者:M. H Jeon; J. W Park; T. H Kim; D. H Yun; K. N Kim; G. Y Yeom 出版日期:2016 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)