| 标题 |
Opportunity to use inert gas flow for control of qualitative characteristics of the grown silicon single crystals |
| 网址 | |
| DOI |
10.17073/1609-3577-2019-3-158-167
doi
|
| 其它 |
期刊:Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 作者:T. V. Kritskaya; V. N. Zhuravlev; V. S. Berdnikov 出版日期:2020-01-19 |
| 求助人 | |
| 下载 | 暂无链接,等待应助者上传 |
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(2025-6-4)