| 标题 |
Impact of Al2O3 and HfO2 Gate Dielectrics on Photoresponse of Graphene Channel Field-Effect MWIR Photodetectors with HgCdTe Absorber |
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| 其它 |
期刊:Journal of Electronic Materials 作者:Md Fazle Rabbe; Volodymyr Sheremet; M. A. H. Sojib; Vitaliy Avrutin; Ümit Ӧzgür; et al 出版日期:2025-06-04 |
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(2025-6-4)