| 标题 |
Quantification of Sodium‐Ion Migration in Silicon Nitride by Flatband‐Potential Monitoring at Device‐Operating Temperatures |
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| DOI | |
| 其它 |
期刊:physica status solidi (a) 作者:Guillaume von Gastrow; Erick Martinez-Loran; Jonathan Scharf; Jacob Clenney; Rico Meier; et al 出版日期:2020-07-08 |
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(2025-6-4)