| 标题 |
Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages 通过集成具有多阈值电压的晶体管制造的AlGaN/GaN HEMT在30 GHz下的功率和线性度的评估
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| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Pengfei Wang; Minhan Mi; Sirui An; Xiang Du; Yuwei Zhou; et al 出版日期:2024 |
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