| 标题 |
Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As |
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| DOI | |
| 其它 |
期刊:Journal of The Electrochemical Society 作者:L. Lamagna; A. Molle; C. Wiemer; S. Spiga; C. Grazianetti; et al 出版日期:2012-01-01 |
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(2025-6-4)