| 标题 |
Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Jianan Song; Anusmita Chakravorty; Miaomiao Jin; Rongming Chu 出版日期:2024-04-22 |
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(2025-6-4)