| 标题 |
Progress of power field effect transistor based on ultra-wide bandgap Ga2O3semiconductor material |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Semiconductors 作者:Hang Dong; Huiwen Xue; Qiming He; Yuan Qin; Guangzhong Jian; et al 出版日期:2019-01-01 |
| 求助人 | |
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(2025-6-4)