Solution-Processed InGaZnO-Based Artificial Neuron for Neuromorphic System

Artificial neurons have good application prospects as efficient processing units in artificial neural morphology. Indiun galliun zinc oxide (IGZO) is widely used in artificial synapses and artificial neurons due to its high reliability. In this study, we propose a neural device based on IGZO memristors fabricated by the solution method, owing to its simple process steps, no vacuum treatment process, rapid film formation, easy doping, and more suitability for low-temperature film deposition on a flexible substrate, as well as compatibility with a thin-film transistor (TFT). The influence of In, Ga, and Zn component ratios on neuron performance is investigated. Indium contributes greatly to the conductivity of the device, gallium inhibits the formation of oxygen vacancies, and zinc has a large impact on the morphology of the film, all of which impact neuron properties. Finally, we successfully simulate the integrate and fire (IF) characteristics of neurons through suitable component ratios and explore the difference in the electrical properties of the devices under different annealing atmospheres. The solution-processed IGZO-based neurons show great potential for neuromorphic systems.