同质结
光探测
光电探测器
宽带
光电子学
光电二极管
材料科学
半导体
带隙
光刻胶
光学
比探测率
光电效应
宽禁带半导体
光伏系统
量子效率
光功率
暗电流
异质结
作者
Junqi Wang,Shengyao Chen,Huan Liu,Yusong Qu,You Li,Lijun Ma,Xiaoshan Du,S. Wang,Zhican Zhou,Cong Wang,Junjie Qi,Qian Liu
摘要
Self-powered photodetector plays a key role in lower power consumption operation in the next-generation optoelectronic system. In recent years, two-dimensional (2D) materials van der Waals lateral homojunction has revealed exceptional potential in the self-powered photodetector. Here, we propose a n–n+ lateral homojunction photodetector based on the intrinsic thickness-dependent bandgap of 2D semiconductor material MoS1.2Se0.8. The photodetector has a pronounced self-powered feature with gate-tunable photovoltaic response and exhibits remarkable zero-bias performance with a photoresponsivity of 4.35 A/W and a specific detectivity of 1.49 × 1011 Jones. Furthermore, the photodetector maintains superior performance across a broad spectral range from 405 to 808 nm. This work not only validates the significant potential of thickness-modulated lateral homojunction in self-powered photodetection but also establishes a versatile platform for developing advanced optoelectronic devices through band structure engineering in 2D material systems.
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