High-responsivity dielectric metasurface Si-based InGaAs photodetector

We demonstrate Si-based InGaAs/InP Multiple Quantum Well (MQW) photodetectors integrated with a dielectric metasurface (DM) structure, achieving 11.8 times photocurrent enhancement and 4.65 times responsivity improvement compared to conventional devices. FDTD simulations reveal optimized light-matter interactions within the DM structure, correlating with experimental observation. The devices exhibit a low dark current of 9 × 10^-3 μA and superior linearity in the photoelectric response curve, validating their potential for high-performance near-infrared detection.