Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20mA injection current, it was found that forward voltages were 3.33 and 3.39V while output powers were 9.0 and 10.6mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.