GaAs pHEMT Damage under High Power MMW Injection

In this paper, the damage effect on GaAs pHEMT of high-power millimeter wave (MMW) is studied based on TCAD. The results show that the heat generated in device decreases with the increasing of frequency. However, the current is obviously higher under MMW injection than that under low frequency microwave injection. In addition, pHEMT shows different nonlinear characteristics under different frequency bands.