Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications

神经形态工程学 光电探测器 材料科学 光电子学 图像传感器 夜视 光电二极管 电阻式触摸屏 噪音(视频) 计算机科学 人工智能 人工神经网络 计算机视觉 图像(数学)
作者
Naif H. Al-Hardan,Muhammad Azmi Abdul Hamid,Azman Jalar,Mohd Firdaus‐Raih
出处
期刊:Materials Today Physics [Elsevier BV]
卷期号:38: 101279-101279 被引量:24
标识
DOI:10.1016/j.mtphys.2023.101279
摘要

Gallium oxide (Ga2O3) is an ultrawide-bandgap semiconductor material that has gained attention in recent years owing to its potential applications in optoelectronic devices. Ga2O3 has become a potential material for high-performance solar-blind ultraviolet (UV–C) photodetectors in the wavelength range of 200–280 nm. One of its emerging applications as a photodetector is as an image sensor. It has been used to create arrays of multiple photodetectors that can detect UV light through objects and produce an image based on the intensity of the detected transmitted UV light. The imaging process has found cutting-edge applications, such as missile detection, flame monitoring, and neuromorphic vision sensors that mimic the human vision system. Ga2O3 photodetectors have several advantages that are useful for such applications. Among them, Ga2O3 has high sensitivity to UV-C light, which allows for the detection of low levels of UV-C radiation. They also have a high signal-to-noise ratio, which is important for imaging applications in which the accurate detection of weak signals is critical. Furthermore, gallium oxide exhibits promising potential as a material for applications in the emergent field of neuromorphic computing. Due to its distinct properties, Ga2O3 has been employed as an artificial synapse, and these devices are expected to be integrated into neuromorphic computing systems. Artificial synapses emulate the structure and function of the human brain and neural system. The functionality of these devices relies on two fundamental mechanisms, namely the resistive switching properties and the optoelectronic properties exhibited by the material. However, there are also challenges in using Ga2O3 for photodetector arrays, including the need for high-quality material growth by minimizing the defects in the material. Additionally, this technology is still in the early stages of development, and further research is needed to improve device performance and reliability. This review article aims to provide an overview on the application of Ga2O3 photodetector for imaging processes and its application in the field of neuromorphic computing.
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