材料科学
石墨烯
拉曼光谱
薄膜晶体管
光电子学
晶体管
异质结
可伸缩电子设备
基质(水族馆)
柔性电子器件
弹性体
电子迁移率
纳米技术
数码产品
薄膜
电压
复合材料
电气工程
图层(电子)
光学
海洋学
物理
工程类
地质学
作者
Hyunchul Kim,He Zhao,Arend M. van der Zande
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-01-12
卷期号:24 (4): 1454-1461
标识
DOI:10.1021/acs.nanolett.3c05091
摘要
Two-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel and characterized them with Raman spectroscopy and transport measurements. The 2D S-TFTs had initial mobility of 4.9 ± 0.7 cm2/(V s). The wrinkling reduced the strain transferred into the 2D materials by a factor of 50, allowing a substrate stretch of up to 23% that could be cycled thousands of times without electrical degradation. The stretch did not alter the mobility but did lead to strain-induced threshold voltage shifts by ΔVT = −1.9 V. These 2D S-TFTs form the foundation for stretchable integrated circuits and enable investigations of the impact of heterogeneous strain on electron transport.
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