Quasi-Atomic Layer Etching Technology for High Uniformity Etching Applications

This paper illustrated Quasi-Atomic Layer Etching (Q-ALE) process, based on Inductively Coupled Plasma (ICP) etching technology. Q-ALE process could solve several conventional plasma etching issues, for instance, Aspect Ratio Dependent Etching (ARDE) effect. Furthermore, Q-ALE process could achieve relatively high etching uniformity with low surface roughness and low etching damage for silicon and compound semiconductors etching applications.