Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field

We examined the wake-up effect in a TiN/Hf 0.4 Zr 0.6 O 2 /TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance–voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.