材料科学
结晶
透射率
成核
发光
猝灭(荧光)
陶瓷
摩尔吸收率
发光二极管
荧光粉
光电子学
Crystal(编程语言)
化学工程
热处理
分析化学(期刊)
量子效率
粒度
发射强度
热的
复合材料
光学
晶体生长
无定形固体
相(物质)
能量转换效率
亚稳态
热导率
作者
Jinliang Huang,Peihong Shi,Junhua Lin,Weijie Yan,Libin Xia,Xinyu Ye
标识
DOI:10.26599/jac.2026.9221371
摘要
Abstract Heat accumulation and severe light scattering limit the applications of near-infrared phosphor-converted LEDs (NIR pc-LEDs) in the high-power field. Replacing phosphor encapsulation with Cr3+-doped glass-ceramics (GCs) provides an effective solution. However, obtaining transparent GCs with high thermal quenching resistance remains challenging. In this work, a novel Cr3+-doped MgNb2O6 GC was fabricated by co-melting and controlled crystallization using glass-forming and target-phase precursors. The resultant GCs possess acceptable transmittance and favorable thermal quenching resistance. By tuning the Mg/Nb ratio, a single MgNb2O6 crystalline phase was precipitated, and a two-step heat treatment optimized the GC transmittance. With nucleation temperature rising from 670 ℃ to 750 ℃ and crystallization temperature increasing from 820 ℃ to 960 ℃, crystallinity, grain size and luminous intensity gradually increase, whereas transmittance decreases monotonically. Cr3+ are proposed to simultaneously occupy Mg2+ and Nb5+ sites in MgNb2O6. Broadband NIR emission covering 600–1300 nm with a full width at half maximum (FWHM) of 210 nm is achieved, arising from intermediate and weak crystal fields and moderate electron-phonon coupling. After nucleation at 730 ℃ and crystallization at 940 ℃, the optimized GC shows a transmittance of approximately 50% and a high absorptivity of 60.5%. The GC exhibits favorable thermal quenching resistance, retaining 67.5% initial luminous intensity at 373 K. The NIR LED device integrated with the MgNb2O6:Cr3+ GC delivers an output power of 240.9 mW and a power conversion efficiency of 6.3%, demonstrating promising application prospects in night-vision illumination, food testing, biomedical and anti-counterfeiting fields.
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