Enhancement-Mode GaAs n-Channel MOSFET

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOSFETs feature an In _0.3 Ga _0.7 As channel layer, a channel mobility of up to 6207 cm ² /Vmiddots, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mum, a source/drain spacing of 3 mum, and a threshold voltage of 0.05 V show a saturation current, transconductance, on-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omegamiddotmm, and 162 mV/dec, respectively