掺杂剂
异质结
扩散
材料科学
半导体
带隙
凝聚态物理
同种类的
焊剂(冶金)
兴奋剂
化学物理
光电子学
热力学
物理
冶金
标识
DOI:10.1103/physrevlett.63.2492
摘要
A theoretical groundwork has been laid for modeling dopant diffusion and distribution in semiconductor heterostructures. The driving force for the diffusion of a dopant is no longer simply given by its concentration gradient as in homogeneous semiconductors, but by the gradient of its chemical potential that derives from several contributions to the free energy of the solid solution, including two sources of strain energy and the variation of band gap with the composition of the heterostructure. Expressions for dopant flux and segregation are given.
科研通智能强力驱动
Strongly Powered by AbleSci AI