First Demonstration of Monolayer WSe 2 p-FETs with 53 nm Ultra-scaled Pitch (L C =20 nm, L CH =33 nm, W=100 nm) and I on of 1195 μA/μm at V ds = -1 V

Two-dimensional (2D) semiconductors offer great promise for ultimate transistor scaling, with significant progress already demonstrated in n-FETs based on MoS2. However, high-performance p-type 2D transistors under aggressive pitch scaling remain insufficiently explored. In this work, we systematically investigate ultra-scaled monolayer WSe2p-type transistors, achieving full-dimensional scaling of channel length, width, and contact length. A record contact pitch of 53 nm is demonstrated, with LC=20 nm and LCH=33 nm. The scaled device with a 100 nm channel width exhibits a high on-current of 350 μA/μm at Vds=-1 V. Meanwhile, devices with a contact length of 200 nm achieve a lower contact resistance (RC) of 0.61 kΩ•μm and an on-current exceeding 1195 μA/μm at Vds=-1 V. This work indicates the tremendous potential of WSe2p-type transistors for ultra-scaled CMOS technologies.