Systematic Analysis and Characterization of Extreme Failure for IGCT in MMC-HVdc System—Part II: Failure Mechanism and Short Circuit Characteristics

Short circuit failure mode (SCFM) of integrated gate commutated thyristor (IGCT) under extreme failure is of vital importance in high voltage direct current power transmission based on modular multilevel converter technology. Due to the sealing housing package of IGCT, the short circuit mechanism is hard to be clarified. Considering this limitation, the current density changes in IGCT with different failure modes are studied under different current levels in a built integrated test system with the placed magnetic sensor array and thermal couple array. Then, the short circuit mechanism of failed IGCT is proposed based on the experimental results. IGCT with turn-off failure performs self-triggering effect due to the focused short current and increased temperature in the initial destruction area, which is usually located in a single position of the outer cathode rings. While IGCT with surge current failure shares the short current among multiple initial destruction areas, which are usually distributed evenly in the wafer area. Scanning electron microscope picture and energy dispersive X-Ray spectroscopy (EDX) analysis show that the formed conducting alloy has spread into the molybdenum plate deeply and the phenomenon of atom diffusion (molybdenum, silicon and aluminum) near the interface is observed. Finally, long term short circuit tests of more than 12 h with both turn-off failure and surge current failure under 3000 A prove the stable SCFM of IGCT.