Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

Oxide-based nonvolatile resistive-switching memories have the potential to close the performance gap between NAND flash and DRAM technologies. This study focuses on the dynamics of the ``SET'' process (switching from the high-resistance to the low-resistance state), unifying the description of gradual and abrupt SET events in the framework of thermal feedback that can result in thermal runaway. In an abrupt event, Joule heating causes positive feedback and a sudden increase in current.