Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation

In this work, the structure and slip systems of dislocations induced by nano-indentation in high quality c-plane (0001) and m-plane (11¯00) Aluminum nitride (AlN) single crystals have been systemically investigated. Dislocations with burgers vector of b = 1/3<112¯0> and b = 1/3<112¯3> were introduced on the (0001) basal planes and {112¯2} pyramidal planes in c-plane AlN, respectively. The similar investigation made in m-plane AlN shows that only {101¯0} <112¯0> slip system was confirmed to be activated when the indenter stress was applied along [11¯00] direction.