缩进
打滑(空气动力学)
材料科学
位错
纳米压痕
纳米-
平面(几何)
结晶学
复合材料
凝聚态物理
几何学
化学
物理
数学
热力学
作者
Jingjing Chen,Kebei Chen,Xujun Su,Mu Niu,Qiqi Wang,Ke Xu
标识
DOI:10.1016/j.tsf.2024.140240
摘要
In this work, the structure and slip systems of dislocations induced by nano-indentation in high quality c-plane (0001) and m-plane (11¯00) Aluminum nitride (AlN) single crystals have been systemically investigated. Dislocations with burgers vector of b = 1/3<112¯0> and b = 1/3<112¯3> were introduced on the (0001) basal planes and {112¯2} pyramidal planes in c-plane AlN, respectively. The similar investigation made in m-plane AlN shows that only {101¯0} <112¯0> slip system was confirmed to be activated when the indenter stress was applied along [11¯00] direction.
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