Sub-bandgap photo-response of black silicon fabricated by femtosecond laser irradiation under water

Here we propose a method to fabricate black Si without the need for any chalcogenide doping, accomplished by femtosecond (fs) laser irradiation in a liquid environment, aiming to fabricate the infrared detector and investigating their optoelectronic performance. Multi-scale laser-induced periodical surface structures (LIPSSs), containing micron sized grooves decorated with low spatial frequency ripples on the surface, can be clearly observed by SEM and 3D confocal microscope. The generated black Si demonstrates superior absorption capabilities across a broad wavelength range of 200-2500 nm, achieving an average absorptance of up to 71%. This represents a notable enhancement in comparison to untreated Si, which exhibits an average absorption rate of no more than 20% across the entire detectable spectrum. A metal-semiconductor-metal (MSM) type photodetector was fabricated based on this black Si, demonstrating remarkable optoelectronic properties, specifically, it attains a responsivity of 50.2 mA/W@10 V and an external quantum efficiency (EQE) of 4.02% at a wavelength of 1550 nm, significantly outperforming the unprocessed Si by more than five orders of magnitude. The great enhancement in infrared absorption as well as the optoelectronic performance can be ascribed to the synergistic effect of the multi-scale LIPSSs and the generated intermediate energy levels. On one hand, the multi-scale structures contribute to an anti-reflection and light trapping property; on the other hand, the defects levels generated through fs laser ablation process under water may narrow the band gap of the Si. The results therefore underscore the remarkable potential of black Si processed by fs laser under water for the application of photodetection, especially in the near-infrared band.