硫化镉
溅射
X射线光电子能谱
碲化镉光电
材料科学
异质结
开路电压
带隙
太阳能电池
分析化学(期刊)
氧气
短路
化学工程
光电子学
薄膜
化学
纳米技术
电压
色谱法
量子力学
物理
冶金
工程类
有机化学
作者
D. M. Meysing,Colin A. Wolden,Michelle M. Griffith,Hasitha Mahabaduge,Joel Pankow,Matthew O. Reese,James M. Burst,William L. Rance,Teresa M. Barnes
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2014-12-11
卷期号:33 (2)
被引量:67
摘要
Oxygenated cadmium sulfide (CdS:O) is commonly used as the n-type window layer in high-performance CdTe heterojunction solar cells. This layer is deposited by reactive sputtering, but the optimal amount of oxygen in the sputtering ambient is highly dependent on the specific system and process employed. In this work, the intrinsic properties of CdS:O were measured as a function of the oxygen content (0%–10%) in the sputtering ambient and correlated to device performance with the goal of better defining optimal CdS:O properties for CdTe solar cells. Optimal performance was found using CdS:O films that contained ∼40 at. % oxygen as measured by Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy confirmed these results and showed that oxygen is incorporated primarily as oxygenated sulfur compounds (SOx). Device efficiency improved from 10.5% using CdS to >14% with CdS:O due largely to increases in short-circuit current density as well as a modest improvement in open-circuit voltage. The transparency of the CdS:O films was well correlated with observed improvements in blue quantum efficiency with increasing oxygen content. The optical bandgap of as-deposited CdS:O was identified as a simple metric for process optimization and transfer, with 2.8 eV being ideal for the device architecture employed.
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