Hg-Based Narrow Bandgap II-VI Semiconductors

This chapter deals with Hg-based II-VI compounds, which include HgS, HgSe, and HgTe. The main structural parameters of the compounds are given, and the features of the synthesis of these compounds and their chemical properties are described. The stability of properties, the nature of the chemical bond, the band diagram, and the specific properties of zero or very narrow bandgap HgSe and HgTe are also analyzed. The physical and electrophysical parameters of Hg-based compounds are given. The approaches used for their doping are considered. A description is given of possible applications of Hg-based II-VI compounds, which include various types of IR photodetectors, Hall sensors, quantum electronics, spintronic, and optoelectronic devices. Disadvantages that may limit the widespread application of Hg-based II-VI compounds are also discussed in this chapter.