Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Figure 2. The log J-V curve with the concentration of C N from 6 × 10 16 cm -3 , 4 × 10 17 cm -3 , 6 × 10 17 cm -3 and 6 × 10 18 cm -3 , the concentration of C Ga is 50% of each C N above in GaN:C layer.