凝聚态物理
反铁磁性
磁矩
范德瓦尔斯力
带隙
铁磁性
基态
材料科学
物理
密度泛函理论
原子物理学
量子力学
分子
作者
Alexandria Alcantara,Christopher Lane,J. T. Haraldsen,Roxanne Tutchton
出处
期刊:Physical review
[American Physical Society]
日期:2023-10-20
卷期号:108 (15)
被引量:2
标识
DOI:10.1103/physrevb.108.155133
摘要
The electronic and magnetic structure of ${\mathrm{CrPS}}_{4}$, a two-dimensional (2D) magnetic semiconductor is examined by employing the SCAN meta-GGA density functional. We find the resulting magnetic moment and band gap are in excellent agreement with experiment. From the bulk magnetic configurations, we confirm the experimentally observed A-type antiferromagnetic (A-AFM) ordered ground state with a magnetic moment of $2.78\phantom{\rule{0.16em}{0ex}}{\textmu{}}_{\mathrm{B}}$ per chromium atom and band gap of 1.34 eV. To gain insight into the evolution of the ground state with layers, the total energy of each magnetic configuration is calculated for a variety of thicknesses. Monolayer ${\mathrm{CrPS}}_{4}$ is predicted to be a ferromagnetic insulator with a band gap of 1.37 eV, and A-AFM for bilayer and trilayer, with band gaps of 1.35 and 1.30 eV, respectively. The electronic structure is reported for the single-, two-, and three-layer and bulk ${\mathrm{CrPS}}_{4}$. Finally, we explore the optical properties of the 2D structure and report the dielectric tensor components and Kerr parameters for the monolayer.
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