NOVEL ATTRIBUTES IN THE CHARACTERISTICS AND SHORT CHANNEL EFFECTS OF DOUBLE GATE CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

In this paper, the short channel effects of different gate configurations and geometry parameters of carbon nanotube (CNT) field-effect transistors with doped source and drain extensions are investigated. The simulation is based on the self-consistent solution of the three-dimensional Poisson equation and Schrodinger equation with open boundary conditions, * دشرا سانشراك ** رايداتسا