The dual damascene cooperate with chemical mechanical planarization(CMP) is an effective way to fabricate copper interconnects.Slurry plays an important role in the Cu CMP process.In this paper,we have developed an alkaline slurry for copper pattern wafer CMP.Firstly,we have studied the characteristics of removal rate of copper under different pressure,rotation speed(RS) and flow rate(FR) by using the alkaline slurry,the results indicated that the influence of pressure on removal rate was larger than RS and FR,the removal rate increased with the pressure,RS and FR followed.The results obtained from copper pattern wafer CMP indicated that the slurry had a considerable planarization capability.