哈夫尼亚
钴
抗坏血酸
单斜晶系
材料科学
正交晶系
选择性
无机化学
化学工程
纳米技术
化学
催化作用
陶瓷
有机化学
晶体结构
立方氧化锆
食品科学
工程类
复合材料
作者
Jeonghyeon Oh,Andrew T. S. Wee,Eun‐Byeol Park,Jaejin Hwang,Seon Je Kim,Hu Young Jeong,Myat Thet Khine,Pavan Pujar,Jaekwang Lee,Youngmin Kim,Sunkook Kim
出处
期刊:Advanced Science
[Wiley]
日期:2025-02-24
卷期号:12 (15): e2408687-e2408687
被引量:2
标识
DOI:10.1002/advs.202408687
摘要
Abstract Engineered defect chemistry in ultrathin (≈5 nm) hafnia through substitutional cobalt (HCO) is investigated for selective glucose sensing. Thin films of HCO, grown using chemical solution deposition (CSD)—traditionally used to grow thick films—on silicon, show significant glucose sensing activity and undergo monoclinic to orthorhombic phase transformation. The presence of multivalent cobalt in hafnia, with oxygen vacancies in proximity, selectively oxidizes glucose with minimal interference from ascorbic acid, dopamine, and uric acid. Theoretical investigations reveal that these oxygen vacancies create a shallow donor level that significantly enhances electrocatalytic activity by promoting charge transfer to the conduction band. This results in considerable selectivity, repeatability, and reproducibility in sensing characteristics. These findings highlight the technological importance of using CSD for thin films, paving the way for ultrathin CSD‐processed HCOs as potential candidates for selective glucose sensing applications.
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