Operation Point based Optimization of Switching Losses with Current-Source Gate Driver for SiC-based Power Modules

Wide bandgap devices-based power modules increase the switching performance by enabling fast switching speeds. Conventional voltage-source gate drivers cannot unlock the full potential of the semiconductors as current and voltage commutations cannot be controlled independently. Recently the current-source gate drivers are used to reduce the switching losses by compensating these drawbacks. However, the performance of these gate drivers at different operating conditions has not been thoroughly investigated. The dependency of the static parameters of semiconductors on operating conditions needs to be considered to enable a reliable and optimal switching loss reduction in a power module. This paper focuses on the performance comparison of a current-source gate driver in constant-current and gate-shaping modes with a voltage-source gate driver at defined boundary conditions. Both partial and full loads at different battery voltages and junction temperatures are investigated. The double pulse measurements show that the operation point based optimization decreases the switching losses at all operating conditions.