Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing

While bipolar phototransistors show promise for in-sensor computing, their incompatibility with standard complementary metal–oxide–semiconductor (CMOS) technology has hindered practical integration. In this work, we demonstrate nonvolatile bidirectional photoresponse using a fully CMOS-compatible metal–ferroelectric–metal–insulator–semiconductor ferroelectric field effect transistor with Hf0.5Zr0.5O2 and IGZO materials. The key lies in a floating gate-based ferroelectric-tunable band alignment mechanism, achieving nonvolatile bipolar photoconductive states while reducing write power by two orders of magnitude. Furthermore, high-performance image processing tasks, including image sharpening, edge detection, and motion detection, are implemented using the device. This work presents a promising approach to CMOS-compatible hardware design for future in-sensor computing systems.