Electron Temperature in Semi-Insulating GaAs for Low Electric Fields

Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of ΕL2-rich semi-insulating GaAs.Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K.They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the ΕL2.The capture rate and the electron temperature as a function of the electric field was determined.A fitting procedure gave the value of electron capture cross-section on the ΕL2 to be 2.7 x 10 -13 cm' which agrees with literature data.