碳纳米管场效应晶体管
晶体管
碳纳米管
逻辑门
材料科学
电子线路
通流晶体管逻辑
纳米技术
场效应晶体管
数字电子学
电容耦合
光电子学
逆变器
电气工程
电压
工程类
作者
Adrian Bachtold,P. Hadley,Takeshi Nakanishi,Cees Dekker
出处
期刊:Science
[American Association for the Advancement of Science]
日期:2001-11-09
卷期号:294 (5545): 1317-1320
被引量:2606
标识
DOI:10.1126/science.1065824
摘要
We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p -doping to n -doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>10 5 ), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
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