Impact of Spin-Transfer Torque on the Write-Error Rate of a Voltage-Torque-Based Magnetoresistive Random-Access Memory

Voltage-torque (VT) switching of magnetization is an attractive method for low-power writing in magnetoresistive random-access memory (MRAM). While most studies of VT-MRAM have been performed under high-resistance conditions to eliminate any spin-transfer torque (STT), for practical applications it is necessary to investigate the impact of STT on switching characteristics, such as the write-error rate (WER). The authors theoretically analyze the impact of STT on the WER, and identify the minimum current density below which the impact of STT on the WER is negligible. Their results are important for developing VT-MRAMs with fast reading speed and low power consumption.