钝化
光致发光
卤化物
钙钛矿(结构)
材料科学
光电子学
电场
离子键合
离子
纳米技术
图层(电子)
无机化学
化学
结晶学
物理
有机化学
量子力学
作者
Hyunjung Yi,Sylvie Rangan,Boxin Tang,C. Daniel Frisbie,Robert Bartynski,Yuri N. Gartstein,Vitaly Podzorov
标识
DOI:10.1016/j.mattod.2019.01.003
摘要
With the development of novel semiconductors for optoelectronic applications, new device functionalities utilizing unique characteristics of emerging materials can be particularly appealing. Here, we demonstrate a reversible control of photoluminescence (PL) emission from lead-halide perovskites achieved in perovskite electric-double-layer transistors. PL in several prototypical lead-halide perovskite compounds is shown to be reversibly tuned by a small gate voltage in the range ±1.2 V applied to the ionic-liquid gel on the perovskite surface, with the intensity modulation that can reach one to two orders of magnitude. This effect may be mediated by a reversible migration of oxygen ions affecting the crystal region near the interface with the ion gel. The resulting passivation (or activation) of non-radiative recombination centers (traps) by oxygen ions would then modulate the population of mobile photogenerated electrons and holes that give rise to PL, which is thus tuned with an electric “knob” (the gate) in these devices.
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