Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

Abstract BaCe 0.9 Y 0.1 O 3−δ (BCYO) and SrZr 0.8 Y 0.2 O 3−δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO 2 /(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO 3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.