Ultrahigh Resolution Positive Working Photoresist For Half-Micron Photolithography

Along with the increase in the integrations of IC's, the process dimensions of photolithography is proceeding to more and more fine patterns. In the fabrication of 16 Mega bit DRAM which is the next generation device, the photolithography will be required to have a technology close to half micron geometry work. The role to be played by photoresists in such geometry work is extremely large and important. Under such circumstance, we have developed ultrahigh resolution positive working photoresist, TSMR-V3 which can cope with a half micron photolithography.