碳化硅
数码产品
工程物理
电力电子
硅
碳化物
电气工程
功率(物理)
工程类
材料科学
光电子学
物理
冶金
量子力学
电压
标识
DOI:10.1109/iedm50854.2024.10873450
摘要
The power semiconductor industry is driven by the increasing demand for efficient, clean and sustainable energy solutions which requires increased attention on advanced materials. Among these, silicon carbide (SiC) has emerged as a disruptive technology providing tangible benefits over traditional silicon-based devices. SiC offers a combination of unique properties, such as high thermal conductivity and high breakdown electric field and bandgap, making it ideal for high-power and high-frequency applications that require greater efficiencies. In this paper, we will explore SiC's impact across various applications - from vehicles and renewable energy systems to industrial supplies - to highlight its pivotal role in revolutionizing electronics. Commercial adoption of SiC technology requires continuous attention to material defects, device reliability and related packaging technologies. In this paper, we also aim to provide researchers and professionals practical knowledge on how SiC can bring highly efficient and dependable solutions to the power semiconductor industry.
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