纳米片
金属浇口
水准点(测量)
工作职能
逻辑门
功能(生物学)
过程(计算)
计算机科学
钥匙(锁)
材料科学
电子工程
光电子学
算法
电气工程
纳米技术
晶体管
工程类
操作系统
栅氧化层
图层(电子)
生物
进化生物学
电压
大地测量学
地理
作者
Gautam Gaddemane,Krishna K. Bhuwalka,Philippe Matagne,G. Rzepa,Maarten L. Van de Put,Sybren Santermans,O. Baumgartner,Hao Wu,Geert Hellings
标识
DOI:10.1109/essderc55479.2022.9947139
摘要
We benchmark possible device options for gate-all-around input/output devices which are process compatible with core logic gate-all-around (GAA) nanosheet devices. We consider a partial gate-all-around device (without metal filling between the sheets) as well as a device with a thin metal gate between the sheets, resulting in work-function mismatch between side- and inner-gates. The results are benchmarked against ideal GAA I/O devices to understand the performance impact for each case. The partial GAA device performs well under certain geometric conditions ( $W_{\text{NS}} < 30\text{nm}$ ). However, the device with thin metal between the sheets shows excellent performance even for large WNS with large work-function deviation assumptions.
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