材料科学
热电效应
量子点
热导率
薄膜
散射
复合数
光电子学
蚀刻(微加工)
声子散射
锗
各向同性腐蚀
图层(电子)
纳米技术
硅
复合材料
光学
物理
热力学
作者
Hsiang-Szu Chang,Ching Chi Wang,Jin–Cherng Hsu,Ming-Tsung Hung,Pei Wen Li,Sheng Wei Lee
摘要
We present an effective approach to grow high-quality thin film of composite quantum dots (CQDs) as a building block for thermoelectric materials, in which 3 times the usual Ge deposition can be incorporated within a 3-fold CQD. Selective chemical etching experiments reveal that a thin Si inserted layer in the CQDs modifies the growth mechanism through surface-mediated diffusion and SiGe alloying. Such thin-film-like CQD materials are demonstrated to exhibit reduced thermal conductivity κ⊥ with respect to the conventional QDs, perhaps as a consequence of enhanced diffusive phonon scattering from the high Si/Ge interface density and enhanced local alloying effect.
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