钨酸盐
超级电容器
材料科学
电容
电解质
电化学
薄膜
镍
化学工程
介孔材料
电流密度
水溶液
电极
阴极
煅烧
纳米技术
化学
冶金
有机化学
催化作用
物理化学
工程类
物理
量子力学
作者
D.J. Patil,Dhanaji B. Malavekar,Vaibhav C. Lokhande,P.P. Bagwade,Sambhaji D. Khot,Taeksoo Ji,C.D. Lokhande
标识
DOI:10.1002/ente.202200295
摘要
Nickel tungstate thin films of different thicknesses are synthesized using the binder‐free successive ionic layer adsorption and reaction (SILAR) method at ambient temperature and subsequent calcination at a temperature of 727 K. The physicochemical characterizations of NiWO 4 thin films are carried out using different techniques. The electrochemical performances of NiWO 4 films are evaluated in 2 m KOH electrolyte using a standard three electrode system. The specific capacitance of 1536 F g −1 at the current density of 2 A g −1 is obtained for the NiWO 4 film. The film exhibits excellent electrochemical stability of 87% after 5000 galvanostatic charge–discharge (GCD) cycles at the current density of 3 A g −1 . This study highlights use of SILAR‐deposited NiWO 4 thin films as a cathode in aqueous asymmetric supercapacitors (ASCs). The ASC device NiWO 4 /KOH/Fe 2 O 3 exhibits a specific capacitance of 115 F g −1 at 2 A g −1 and specific energy of 23Wh kg −1 at specific power of 1.2 kW kg −1 . The device shows remarkable electrochemical cycling stability (78% capacitance retention after 5000 GCD cycles). The SILAR‐deposited NiWO 4 thin films are expected to emerge as a potential candidate for supercapacitors.
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